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| STB70NF3LL N-channel 30V - 0.0075 - 70A - D2PAK Low gate charge STripFETTM II Power MOSFET General features Type STB70NF3LL VDSS 30V RDS(on) < 0.0095 ID 70A Optimal RDS(on) x Qg trade-off @ 4.5V Conduction losses reduced Switching losses reduced 3 1 DPAK Description This application specific Power MOSFET is the third genaration of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance. Internal schematic diagram Applications Switching application Order codes Part number STB70NF3LLT4 Marking B70NF3LL@ Package D PAK 2 Packaging Tape & reel July 2006 Rev 7 1/13 www.st.com 13 Contents STB70NF3LL Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 6 Test circuit ................................................ 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 STB70NF3LL Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VDGR VGS ID(1) ID IDM (2) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 k) Gate- source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor Value 30 30 16 70 50 280 100 0.67 5.5 500 -55 to 175 Operating junction temperature Unit V V V A A A W W/C V/ns mJ C PTOT (3) (4) dv/dt EAS Peak diode recovery voltage slope Single pulse avalanche energy Storage temperature Tstg TJ 1. Current limited by the package 2. Pulse width limited by safe operating area 3. 4. ISD 70A, di/dt 350A/s, VDD V(BR)DSS, TJ TJMAX Starting TJ = 25 oC, ID = 35A, VDD = 25V Table 2. Symbol RthJC RthJA Tl Thermal data Parameter Thermal resistance junction-case Max Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose Value 1.5 62.5 300 Unit C/W C/W C 3/13 Electrical characteristics STB70NF3LL 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 3. Symbol V(BR)DSS On/off states Parameter Drain-source Breakdown voltage Zero gate voltage Drain current (VGS = 0) Gate-body leakage Current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 A, VGS = 0 VDS = Max rating VDS = Max rating TC = 125C VGS = 16 V VDS = VGS VGS = 10V VGS = 4.5V ID = 250A ID = 35A ID = 18A 1 0.0075 0.0095 0.010 0.012 Min 30 1 10 100 Typ Max Unit V A A nA V IDSS IGSS VGS(th) RDS(on) Table 4. Symbol gfs Ciss Coss Crss Dynamic Parameter Forward Transconductance Input capacitance Output capacitance Reverse transfer capacitance Test conditions VDS = 15V ID = 35A Min Typ 25 1650 540 130 Max Unit S pF pF pF VDS = 25V f = 1MHz VGS = 0 4/13 STB70NF3LL Electrical characteristics Table 5. Symbol td(on) tr Qg Qgs Qgd td(off) tf Switching times Parameter Turn-on delay time Rise time Total gate charge Gate-source charge Gate-drain charge Turn-off delay time Fall time Test conditions ID = 35A VDD = 15V VGS = 4.5V RG = 4.7 (Resistive Load Figure 16) VDD= 15V ID= 70A VGS= 4.5V VDD = 15 V ID = 35 A VGS = 4.5 V RG = 4.7, (Resistive Load Figure 16) Min Typ 23 165 24 8.5 12 27 28 33 Max Unit ns ns nC nC nC ns ns Table 6. Symbol ISD ISDM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 70 A VGS = 0 42 52 2.5 Test conditions Min Typ Max 70 280 1.3 Unit A A V ns nC A (1) VSD (2) trr Qrr IRRM Reverse recovery time ISD = 70 A di/dt = 100A/s TJ = 150C Reverse recovery charge VDD = 20 V Reverse recovery current (see test circuit Figure 14) 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 5/13 Electrical characteristics STB70NF3LL 2.1 Figure 1. Electrical characteristics (curves) Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Source-drain diode forward characteristics Figure 6. Static drain-source on resistance 6/13 STB70NF3LL Figure 7. Gate charge vs gate-source voltage Figure 8. Electrical characteristics Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature Figure 10. Normalized on resistance vs temperature Figure 11. Normalized breakdown vs temperature 7/13 Test circuit STB70NF3LL 3 Test circuit Figure 13. Gate charge test circuit Figure 12. Switching times test circuit for resistive load Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform 8/13 STB70NF3LL Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/13 Package mechanical data STB70NF3LL D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 3 1 10/13 STB70NF3LL Packing mechanical data 5 Packing mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 11/13 Revision history STB70NF3LL 6 Revision history Table 7. Date 21-Jun-2004 25-Jul-2006 Revision history Revision 6 7 Preliminary version New template, no content change Changes 12/13 STB70NF3LL Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 13/13 |
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